Sol-gel processed Mg-doped In<sub>2</sub>O<sub>3</sub> thin-film transistors

Taegyun Kim; Bongho Jang; Sojeong Lee; Won‐Yong Lee; Jaewon Jang

doi:10.23919/am-fpd.2018.8437415

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Sol-gel processed Mg-doped In₂O₃ thin-film transistors

Taegyun Kim Bongho Jang Sojeong Lee Won‐Yong Lee Jaewon Jang

Year: 2018 Pages: 1-2

DOI: 10.23919/am-fpd.2018.8437415

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Abstract

We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm ² /Vs-s and a threshold voltage of-4 V, having shifted from -18 V.

Keywords:

Thin-film transistor Doping Threshold voltage Materials science Degradation (telecommunications) Oxide Transistor Indium Electron mobility Optoelectronics Analytical Chemistry (journal) Voltage Electrical engineering Condensed matter physics Physics Nanotechnology Chemistry Metallurgy Engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Sol-gel processed Mg-doped In₂O₃ thin-film transistors

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