High Performance Sol-gel Processed SnO2 thin film transistor with sol-gel processed ZrO2 layers
Abstract
We propose an effective process for the enhancement of electrical performance in solution-processed SnO 2 -based oxide thin-film transistors (TFTs) by adding a ZrO 2 layer on the active layer. The ZrO 2 layer was spin coated on the SnO 2 film with a single coating and double coating process under the same condition. The SnO 2 TFTs with double-coated ZrO 2 layers showed a saturation mobility of 51.2 cm 2 /Vs, which was more than four times higher than that of conventional SnO 2 TFTs. Furthermore, the subthreshold slope reduced from 1.17 V /decade to 0.36 V /decade for SnO 2 TFTs with double-coated ZrO 2 layers. These results are attributed to the electron transfer based on the theory of electron donation from high-k dielectrics to oxide semiconductors.
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