Characterization of silicon oxynitride films deposited by HIPIMS deposition technique

Abstract

In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering. The transmittance of SiON films increased from 13.6% to 88.9% at 215 nm after introducing 2.2 sccm O2 gas. The extinction coefficient was smaller than 1×10–3 from 250nm to 700nm. The average transmittance of the SiON films on the glass in the visible range was 86 % and its hardness was 24 Gpa as introducing 2 sccm O2 gas.