High-Confinement, High-Q Microring Resonators on Silicon Carbide-On-Insulator (SiCOI)
Yi ZhengAilun YiMinhao PuBingdong ChangTiangui YouKai HuangXin OuHaiyan Ou
Abstract
We realize silicon carbide-on-insulator platform based on crystalline 4H SiC and demonstrate high confinement SiC resonators with sub-micron waveguide cross-sectional dimension. The obtained Q (57,000) is the highest Q reported for SiC microring resonators.
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