Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Lei Zhang; 刘国超 LIU Guo-chao; 董承远 DONG Cheng-yuan

doi:10.3788/fgxb20183906.0823

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Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

Lei Zhang 刘国超 LIU Guo-chao 董承远 DONG Cheng-yuan

Year: 2018 Journal: Chinese Journal of Luminescence Vol: 39 (6)Pages: 823-829 Publisher: Science Press

DOI: 10.3788/fgxb20183906.0823

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Keywords:

Materials science Thin-film transistor Amorphous solid Electrode Optoelectronics Transistor Nanotechnology Electrical engineering Voltage Crystallography Layer (electronics)

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical and Thermal Properties of Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

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Mo/Cu Source/Drain Electrodes for Amorphous InGaZnO Thin Film Transistors

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