Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

吴 崎 WU Qi; 许玲 XU Ling; 董承远 DONG Cheng-yuan

doi:10.3788/yjyxs20163104.0375

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Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

吴崎 WU Qi 许玲 XU Ling 董承远 DONG Cheng-yuan

Year: 2016 Journal: Chinese Journal of Liquid Crystals and Displays Vol: 31 (4)Pages: 375-381 Publisher: Science Press

DOI: 10.3788/yjyxs20163104.0375

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Keywords:

Thin-film transistor Materials science Amorphous solid Electrode Optoelectronics Transistor Electrical engineering Nanotechnology Voltage Crystallography Chemistry Engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical and Thermal Properties of Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors

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