Room Temperature Fabrication of Variable Resistive Memory Using Ga-Sn-O Thin Film

Abstract

Variable Resistive Memorys (VRMs) are promising devices with many advantages such as simple structure, high speed, etc. Amorphous oxide semiconductors (AOS) thin films have been used for many electric devices. In this presentation, we propose a new AOS, Ga-Sn-O (GTO) thin film for a VRM. We fabricated the VRM active layer using GTO and electrodes using aluminum. The Al/GTO/Al cell VRM showed the bipolar switching characteristic of a switching voltage (~2.0 V), ON/OFF ratio ~10) and reproducibility (~50).