Room-temperature fabrication of a Ga-Sn-O thin-film transistor

Tokiyoshi Matsuda; Ryo Takagi; Kenta Umeda; Mutsumi Kimura

doi:10.1016/j.sse.2017.05.006

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Room-temperature fabrication of a Ga-Sn-O thin-film transistor

Tokiyoshi Matsuda Ryo Takagi Kenta Umeda Mutsumi Kimura

Year: 2017 Journal: Solid-State Electronics Vol: 134 Pages: 19-21 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2017.05.006

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Keywords:

Sputtering Sputter deposition Materials science Thin-film transistor Optoelectronics Annealing (glass) Amorphous solid Fabrication Thin film Transistor Semiconductor Cavity magnetron Metallurgy Nanotechnology Electrical engineering Chemistry Crystallography Voltage Layer (electronics)

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Room-temperature fabrication of a Ga-Sn-O thin-film transistor

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