JOURNAL ARTICLE
Room-temperature forming of Ga-Sn-O film for thin-film transistors
Abstract
We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. The field-effect mobility is 0.48 cm 2 ·V -1 ·s -1 and the threshold voltage is 2.22 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.
Keywords:
Thin-film transistor Annealing (glass) Materials science Transistor Sputter deposition Amorphous solid Metal Optoelectronics Thin film Sputtering Analytical Chemistry (journal) Electrical engineering Crystallography Nanotechnology Chemistry Voltage Metallurgy Engineering Organic chemistry
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Topics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Transition Metal Oxide Nanomaterials
Physical Sciences → Materials Science → Polymers and Plastics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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