Ultrafast absorption recovery in germanium/silicon-germanium quantum wells

Emel Tasyürek; Stephanie Claussen; Jonathan E. Roth; David A. B. Miller

doi:10.1109/photonics.2010.5698988

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Ultrafast absorption recovery in germanium/silicon-germanium quantum wells

Emel Tasyürek Stephanie Claussen Jonathan E. Roth David A. B. Miller

Year: 2010 Pages: 517-518

DOI: 10.1109/photonics.2010.5698988

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Abstract

We show ultrafast absorption changes in germanium-based quantum wells, attributing these to exciton bleaching, ultrafast intervalley scattering, carrier escape and transport, and field screening, and compare these experimental results to modeling.

Keywords:

Germanium Ultrashort pulse Exciton Absorption (acoustics) Silicon Quantum well Materials science Optoelectronics Scattering Quantum dot Optics Condensed matter physics Physics Laser

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ultrafast absorption recovery in germanium/silicon-germanium quantum wells

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