Erbium in silicon–germanium quantum wells

Ayesha Naveed; M. Q. Huda; K.F. Abd El-Rahman; J. Hartung; J.H. Evans–Freeman; А. R. Peaker; D. C. Houghton; C. Jeynes; W. P. Gillin

doi:10.1016/s0022-2313(98)00133-1

JOURNAL ARTICLE

Erbium in silicon–germanium quantum wells

Ayesha Naveed M. Q. Huda K.F. Abd El-Rahman J. Hartung J.H. Evans–Freeman А. R. Peaker D. C. Houghton C. Jeynes W. P. Gillin

Year: 1998 Journal: Journal of Luminescence Vol: 80 (1-4)Pages: 381-386 Publisher: Elsevier BV

DOI: 10.1016/s0022-2313(98)00133-1

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Keywords:

Erbium Photoluminescence Electroluminescence Silicon Materials science Germanium Quantum well Luminescence Doping Optoelectronics Silicon-germanium Transmission electron microscopy Optics Nanotechnology Laser Physics

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Erbium in silicon–germanium quantum wells

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