Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells
Abstract
We have investigated hexagonal Germanium/Silicon-Germanium nanowire quantum well heterostructures using photoluminescence. Bright light emission and varying quantum confinement with well thickness are observed which are characteristics indicative of a direct bandgap Type I nature of the hex-Ge/SiGe QW system.
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