Plasma deposited aluminum nitride films

Abstract

Thin films were deposited at room temperature by plasma polymerization of trimethylaluminum and nitrogen or ammonia. These films appeared to consist of amorphous aluminum nitride. Spectroscopic studies of the plasma light emission indicated that the choice of nitrogen or ammonia as the nitrogen-containing reactant has little effect on the plasma chemistry. However, higher quality films may be produced by choice of a different aluminum-containing reactant, higher substrate temperatures, or a more energetic plasma.