Resonant tunneling transport in AlzGa1−zN/InxGa1−xN/AlzGa1−zN/InyGa1−yN quantum structures

A. Bhouri; Amani Rached; J.‐L. Lazzari

doi:10.1088/0022-3727/48/38/385102

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Resonant tunneling transport in Al_zGa_1−zN/In_xGa_1−xN/Al_zGa_1−zN/In_yGa_1−yN quantum structures

A. Bhouri Amani Rached J.‐L. Lazzari

Year: 2015 Journal: Journal of Physics D Applied Physics Vol: 48 (38)Pages: 385102-385102 Publisher: Institute of Physics

DOI: 10.1088/0022-3727/48/38/385102

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Keywords:

Quantum tunnelling Transmission coefficient Condensed matter physics Materials science Indium Classification of discontinuities Conduction band Electron Physics Optoelectronics Transmission (telecommunications) Electrical engineering Quantum mechanics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Resonant tunneling transport in Al_zGa_1−zN/In_xGa_1−xN/Al_zGa_1−zN/In_yGa_1−yN quantum structures

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Resonant tunneling transport in AlzGa1−zN/InxGa1−xN/AlzGa1−zN/InyGa1−yN quantum structures

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