Monolithic white LED based on AlxGa1−xN/InyGa1−yN DBR resonant-cavity

Yu Chen; Lirong Huang; Shanshan Zhu

doi:10.1088/1674-4926/30/1/014005

ScienceGate Book Chapters

JOURNAL ARTICLE

Monolithic white LED based on Al_xGa_1−xN/In_yGa_1−yN DBR resonant-cavity

Yu Chen Lirong Huang Shanshan Zhu

Year: 2009 Journal: Journal of Semiconductors Vol: 30 (1)Pages: 014005-014005 Publisher: IOP Publishing

DOI: 10.1088/1674-4926/30/1/014005

Get Full-Text PDF Get Analytical Report

Abstract

A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlxGa1−xN/InyGa1−yN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.

Keywords:

Materials science Crystallography Physics Chemistry

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.06

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Monolithic white LED based on Al_xGa_1−xN/In_yGa_1−yN DBR resonant-cavity

Abstract

Metrics

Citation History

Topics

Related Documents

Resonant tunneling transport in Al_zGa_1−zN/In_xGa_1−xN/Al_zGa_1−zN/In_yGa_1−yN quantum structures

On spinodal decomposition of B _x Al _y Ga _{1– x – y} N, B _x Ga _y In _{1– x – y} N and B _x Al _y In _{1– x – y} N alloys

Energy gap and bond lengths of Al_xGa_yIn_{1–x –y}N, Al_xGa_yIn_{1–x –y}P and Al_xGa_yIn_{1–x –y}As quaternary alloys

Different temperature dependence of carrier transport properties between Al _x Ga _{1– x} N/In _y Ga _{1– y} N/GaN and Al _x Ga _{1– x} N/GaN heterostructures

Precipitation in Al_xGa₁_-_xN_yAs₁_-_y Alloys

Monolithic white LED based on AlxGa1−xN/InyGa1−yN DBR resonant-cavity

Abstract

Metrics

Citation History

Topics

Related Documents

Resonant tunneling transport in AlzGa1−zN/InxGa1−xN/AlzGa1−zN/InyGa1−yN quantum structures

On spinodal decomposition of B x Al y Ga 1– x – y N, B x Ga y In 1– x – y N and B x Al y In 1– x – y N alloys

Energy gap and bond lengths of AlxGayIn1–x –yN, AlxGayIn1–x –yP and AlxGayIn1–x –yAs quaternary alloys

Different temperature dependence of carrier transport properties between Al x Ga 1– x N/In y Ga 1– y N/GaN and Al x Ga 1– x N/GaN heterostructures

Precipitation in AlxGa1-xNyAs1-y Alloys

Monolithic white LED based on Al_xGa_1−xN/In_yGa_1−yN DBR resonant-cavity

Resonant tunneling transport in Al_zGa_1−zN/In_xGa_1−xN/Al_zGa_1−zN/In_yGa_1−yN quantum structures

On spinodal decomposition of B _x Al _y Ga _{1– x – y} N, B _x Ga _y In _{1– x – y} N and B _x Al _y In _{1– x – y} N alloys

Energy gap and bond lengths of Al_xGa_yIn_{1–x –y}N, Al_xGa_yIn_{1–x –y}P and Al_xGa_yIn_{1–x –y}As quaternary alloys

Different temperature dependence of carrier transport properties between Al _x Ga _{1– x} N/In _y Ga _{1– y} N/GaN and Al _x Ga _{1– x} N/GaN heterostructures

Precipitation in Al_xGa₁_-_xN_yAs₁_-_y Alloys