Properties of a New Passivation SiNx Films Prepared by cat-CVD Method

JOURNAL ARTICLE

Year: 1996

DOI: 10.7567/ssdm.1996.pc-8-3

Keywords:

Passivation Materials science Optoelectronics Nanotechnology Layer (electronics)

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Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics