Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates

Koichi Koyama; Keisuke Ohdaira; Hideki Matsumura

doi:10.1016/j.tsf.2011.01.294

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Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates

Koichi Koyama Keisuke Ohdaira Hideki Matsumura

Year: 2011 Journal: Thin Solid Films Vol: 519 (14)Pages: 4473-4475 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2011.01.294

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Keywords:

Passivation Wafer Plasma-enhanced chemical vapor deposition Materials science Chemical vapor deposition Silicon nitride Amorphous solid Optoelectronics Nitride Layer (electronics) Deposition (geology) Stack (abstract data type) Silicon Nanotechnology Chemistry Crystallography

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates

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