Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

Keiji Ikeda; M. Oda; Toshifumi Irisawa; Y. Kamimuta; Y. Moriyama; Tetsuo Tezuka

doi:10.7567/ssdm.2011.d-6-2

ScienceGate Book Chapters

JOURNAL ARTICLE

Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

Keiji Ikeda M. Oda Toshifumi Irisawa Y. Kamimuta Y. Moriyama Tetsuo Tezuka

Year: 2011

DOI: 10.7567/ssdm.2011.d-6-2

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Optoelectronics MOSFET Silicon on insulator Insulator (electricity) Germanium Silicon-germanium Engineering physics Electrical engineering Transistor Silicon Physics Voltage Engineering

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.32

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

Metrics

Topics

Related Documents

Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator

Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-Insulator p-MOSFETs

Hole and electron mobility enhancement in strained SiGe vertical MOSFETs