Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-Insulator p-MOSFETs

Seong-Je Kim; Ji-Young Baek; Tae‐Hun Shim; Hun-Joo Lee; Jea‐Gun Park; Kwan-Su Kim; Won-Ju Cho

doi:10.3938/jkps.53.2171

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Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-Insulator p-MOSFETs

Seong-Je Kim Ji-Young Baek Tae‐Hun Shim Hun-Joo Lee Jea‐Gun Park Kwan-Su Kim Won-Ju Cho

Year: 2008 Journal: Journal of the Korean Physical Society Vol: 53 (4)Pages: 2171-2174 Publisher: Springer Science+Business Media

DOI: 10.3938/jkps.53.2171

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Keywords:

Materials science Silicon on insulator Optoelectronics MOSFET Silicon Electron mobility Strained silicon Engineering physics Electrical engineering Transistor Physics Amorphous silicon Voltage Crystalline silicon Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-Insulator p-MOSFETs

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