Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices

S. Çiraci; Inder P. Batra

doi:10.1007/978-1-4684-5553-3_25

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Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices

S. Çiraci Inder P. Batra

Year: 1988 NATO ASI series. Series B : Physics Pages: 319-331 Publisher: Springer Nature

DOI: 10.1007/978-1-4684-5553-3_25

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Keywords:

Superlattice Condensed matter physics Pseudopotential Materials science Band gap Band offset Semiconductor Direct and indirect band gaps Electronic structure Valence band Optoelectronics Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices

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