Electronic properties of strained Si/Ge superlattices: tight binding approach

G. Theodorou; C. Tserbak; H. M. Polatoglou

doi:10.1016/0040-6090(92)90070-r

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Electronic properties of strained Si/Ge superlattices: tight binding approach

G. Theodorou C. Tserbak H. M. Polatoglou

Year: 1992 Journal: Thin Solid Films Vol: 222 (1-2)Pages: 209-211 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(92)90070-r

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Keywords:

Tight binding Superlattice Materials science Germanium Crystallography Electronic structure Condensed matter physics Nanotechnology Optoelectronics Chemistry Silicon Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electronic properties of strained Si/Ge superlattices: tight binding approach

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