JOURNAL ARTICLE

ELECTRONIC STRUCTURE OF Si-Ge STRAINED SUPERLATTICES

C. TejedorL. Brey

Year: 1987 Journal:   Le Journal de Physique Colloques Vol: 48 (C5)Pages: C5-557   Publisher: EDP Sciences

Abstract

whether they are published or not.The documents may come from teaching and research institutions in France or abroad, or from public or private research centers.L'archive ouverte pluridisciplinaire

Keywords:
Superlattice Materials science Germanium Silicon Optoelectronics Engineering physics Physics

Metrics

2
Cited By
0.44
FWCI (Field Weighted Citation Impact)
0
Refs
0.55
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry
Advanced Research in Systems and Signal Processing
Physical Sciences →  Engineering →  Control and Systems Engineering

Related Documents

JOURNAL ARTICLE

ELECTRONIC STRUCTURE OF Si-Ge STRAINED SUPERLATTICES

C. TEJEDORL. BREY

Journal:   Springer Link (Chiba Institute of Technology) Year: 1987
JOURNAL ARTICLE

Electronic structure of Ge/Si monolayer strained-layer superlattices

T. P. PearsallJ. BevkJ. C. BeanJ. M. BonarJ. P. MannáertsA. Ourmazd

Journal:   Physical review. B, Condensed matter Year: 1989 Vol: 39 (6)Pages: 3741-3757
BOOK-CHAPTER

Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices

S. ÇiraciInder P. Batra

NATO ASI series. Series B : Physics Year: 1988 Pages: 319-331
JOURNAL ARTICLE

Unified approach to the electronic structure of strained Si/Ge superlattices

C. TserbakH. M. PolatoglouG. Theodorou

Journal:   Physical review. B, Condensed matter Year: 1993 Vol: 47 (12)Pages: 7104-7124
BOOK-CHAPTER

SI-GE STRAINED LAYER SUPERLATTICES

G. Abstreiter

Elsevier eBooks Year: 1989 Pages: 1-8
© 2026 ScienceGate Book Chapters — All rights reserved.