Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films

Abstract

Specific features of remote plasma enhanced chemical vapor deposition processes with inductive and capacitive coupling of power have been analyzed. Experimental results from a study of the physical and chemical regularities of those processes have been considered. Influence of diluting nitrogen with noble gases on growth rate and composition of the deposited films has been discussed. Essential role of argon diluting providing a high concentration of atomic nitrogen in the reacting gas phase required for plasma chemical synthesis of nitride films was demonstrated. Possible approaches to further improvement of plasma enhanced chemical deposition processes have been proposed.