Silicon nitride and silicon diimide grown by remote plasma enhanced chemical vapor deposition

Abstract

We discuss the deposition of silicon nitride (Si3N4) and silicon diimide [Si(NH)2] thin films by remote plasma enhanced chemical vapor deposition (RPECVD). We show that the use of two different nitrogen source gases N2 and NH3 leads to qualitatively different local bonding in the deposited films. We present studies of the local chemical bonding as a function of the substrate temperature (Ts) and the dilution of the nitrogen containing species with the rare gases Ar and He. We show that diluting the N2 with He by a factor of about 10 to 1 increases the growth rate for thin film formation by a factor of more than 3. Dilution of NH3 with He, reduces the deposition rate and also the amount of bonded hydrogen.