JOURNAL ARTICLE
GaAs grown on GaP substrate by molecular beam epitaxy.
Toshimitsu NagaiKanehiro MachiyaHiroaki KikuchiTakashi NomuraMasahiro MiyaoMinoru Hagino
Year: 1985 Journal: Shinku Vol: 28 (5)Pages: 364-367 Publisher: The Vacuum Society of Japan
Keywords:
Molecular beam epitaxy Substrate (aquarium) Optoelectronics Materials science Epitaxy Nanotechnology Biology Layer (electronics)
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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