Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate

I. V. Shtrom; N.V. Sibirev; I. V. Ilkiv; I. P. Soshnikov; R.R. Reznik; G. É. Cirlin

doi:10.1109/iclo59702.2024.10624345

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Pb-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si substrate

I. V. Shtrom N.V. Sibirev I. V. Ilkiv I. P. Soshnikov R.R. Reznik G. É. Cirlin

Year: 2024 Pages: 354-354

DOI: 10.1109/iclo59702.2024.10624345

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Keywords:

Molecular beam epitaxy Nanowire Substrate (aquarium) Materials science Optoelectronics Catalysis Gallium arsenide Epitaxy Silicon Nanotechnology Chemistry Layer (electronics)

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Topics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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