N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary Passivation

H. Shichijo; S.D.S. Malhi; P.K. Chatterjee; A.H. Shah; G. Pollack; W. H. Richardson; Rajiv R. Shah; Matthew Douglas; Hon Wai Lam

doi:10.1557/proc-33-193

JOURNAL ARTICLE

N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary Passivation

H. Shichijo S.D.S. Malhi P.K. Chatterjee A.H. Shah G. Pollack W. H. Richardson Rajiv R. Shah Matthew Douglas Hon Wai Lam

Year: 1984 Journal: MRS Proceedings Vol: 33 Publisher: Cambridge University Press

DOI: 10.1557/proc-33-193

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Keywords:

Passivation Materials science Polysilicon depletion effect MOSFET Grain boundary Optoelectronics Chemical vapor deposition Short-channel effect Channel (broadcasting) Leakage (economics) Engineering physics Electrical engineering Layer (electronics) Metallurgy Nanotechnology Transistor Microstructure Gate oxide Voltage Engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary Passivation

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