Effects of grain boundary passivation on the characteristics of <i>p</i> -channel MOSFETs in LPCVD polysilicon

S.D.S. Malhi; Rajiv R. Shah; H. Shichijo; Russell F. Pinizzotto; C.E. Chen; P.K. Chatterjee; Hon Wai Lam

doi:10.1049/el:19830674

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Effects of grain boundary passivation on the characteristics of p -channel MOSFETs in LPCVD polysilicon

S.D.S. Malhi Rajiv R. Shah H. Shichijo Russell F. Pinizzotto C.E. Chen P.K. Chatterjee Hon Wai Lam

Year: 1983 Journal: Electronics Letters Vol: 19 (23)Pages: 993-994 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19830674

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Abstract

p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.

Keywords:

Passivation Materials science Polysilicon depletion effect Chemical vapor deposition Grain boundary Optoelectronics CMOS Channel (broadcasting) MOSFET Current (fluid) Electrical engineering Electronic engineering Engineering physics Transistor Metallurgy Voltage Nanotechnology Engineering Layer (electronics) Microstructure Gate oxide

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

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Effects of grain boundary passivation on the characteristics of p -channel MOSFETs in LPCVD polysilicon

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