Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

Abstract

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm 2 . The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm 2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.