RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SiO2 FILMS

T. W. Hickmott

doi:10.1063/1.1652981

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RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SiO2 FILMS

T. W. Hickmott

Year: 1969 Journal: Applied Physics Letters Vol: 15 (7)Pages: 232-234 Publisher: American Institute of Physics

DOI: 10.1063/1.1652981

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Abstract

The optical absorption and electron spin resonance of atomic defects in rf-sputtered SiO2 films have been measured. The properties of the centers are similar to those produced when pure, fused SiO2 is bombarded with neutrons.

Keywords:

Materials science Absorption (acoustics) Electron paramagnetic resonance Radio frequency Radiation Sputtering Neutron Resonance (particle physics) Optoelectronics Irradiation Thin film Atomic physics Nuclear magnetic resonance Optics Nanotechnology Physics Nuclear physics Composite material

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

RADIATION DAMAGE IN RADIO-FREQUENCY-SPUTTERED SiO2 FILMS

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