Stoichiometry and atomic defects in radio frequency sputtered SiO2

JOURNAL ARTICLE

Year: 1979 Journal: Thin Solid Films Vol: 58 (2)Pages: 295-295 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(79)90252-9

Keywords:

Stoichiometry Radio frequency Materials science Chemistry Computer science Telecommunications Physical chemistry

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