AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

Yosuke Tamura; Kazuhiro Hane

doi:10.1186/s11671-015-1178-7

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AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

Yosuke Tamura Kazuhiro Hane

Year: 2015 Journal: Nanoscale Research Letters Vol: 10 (1)Pages: 460-460 Publisher: Springer Science+Business Media

DOI: 10.1186/s11671-015-1178-7

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Keywords:

Molecular beam epitaxy Materials science Substrate (aquarium) Nanochemistry Nanostructure Optoelectronics Epitaxy Flux (metallurgy) Crystal (programming language) Full width at half maximum Nitrogen Nanotechnology Crystallography Layer (electronics) Metallurgy Chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

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