Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Aihua Zhong; Kazuhiro Hane

doi:10.1186/1556-276x-7-686

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Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

Aihua Zhong Kazuhiro Hane

Year: 2012 Journal: Nanoscale Research Letters Vol: 7 (1)Pages: 686-686 Publisher: Springer Science+Business Media

DOI: 10.1186/1556-276x-7-686

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Keywords:

Materials science Molecular beam epitaxy Optoelectronics Substrate (aquarium) Transmission electron microscopy Epitaxy Photoluminescence Nanochemistry Nanotechnology Scanning electron microscope Composite material Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

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