Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates

Dayong Jiang; Jieming Qin; Xiyan Zhang; Zhaohui Bai; Dezhen Shen

doi:10.1016/j.mseb.2011.03.001

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Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates

Dayong Jiang Jieming Qin Xiyan Zhang Zhaohui Bai Dezhen Shen

Year: 2011 Journal: Materials Science and Engineering B Vol: 176 (9)Pages: 736-739 Publisher: Elsevier BV

DOI: 10.1016/j.mseb.2011.03.001

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Keywords:

Responsivity Molecular beam epitaxy Photocurrent Photoconductivity Photodetector Materials science Optoelectronics Ultraviolet Quantum efficiency Dark current Epitaxy Nanotechnology

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates

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