JOURNAL ARTICLE

AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

J. L. PauE. MonroyM. A. Sánchez-Garcı́aE. CallejaE. Muñoz

Year: 2002 Journal:   Materials Science and Engineering B Vol: 93 (1-3)Pages: 159-162   Publisher: Elsevier BV
Keywords:
Responsivity Photodetector Optoelectronics Materials science Photoconductivity Molecular beam epitaxy Ultraviolet Photodiode Substrate (aquarium) Semiconductor Visible spectrum Epitaxy Layer (electronics) Nanotechnology

Metrics

45
Cited By
1.87
FWCI (Field Weighted Citation Impact)
11
Refs
0.86
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Photocathodes and Microchannel Plates
Physical Sciences →  Engineering →  Biomedical Engineering

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