AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

J. L. Pau; E. Monroy; M. A. Sánchez-Garcı́a; E. Calleja; E. Muñoz

doi:10.1016/s0921-5107(02)00051-x

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AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

J. L. Pau E. Monroy M. A. Sánchez-Garcı́a E. Calleja E. Muñoz

Year: 2002 Journal: Materials Science and Engineering B Vol: 93 (1-3)Pages: 159-162 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(02)00051-x

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Keywords:

Responsivity Photodetector Optoelectronics Materials science Photoconductivity Molecular beam epitaxy Ultraviolet Photodiode Substrate (aquarium) Semiconductor Visible spectrum Epitaxy Layer (electronics) Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

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