Characterization of Dielectric Silicon Nitride Thin Films Deposited by Radio Frequency Plasma-Enhanced and Electron Cyclotron Resonance Chemical Vapor Deposition

Prachi Yadav; Sunil Kumar; Sandeep Kumar

doi:10.15373/22778160/mar2014/55

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Characterization of Dielectric Silicon Nitride Thin Films Deposited by Radio Frequency Plasma-Enhanced and Electron Cyclotron Resonance Chemical Vapor Deposition

Prachi Yadav Sunil Kumar Sandeep Kumar

Year: 2012 Journal: Global Journal For Research Analysis Vol: 3 (3)Pages: 158-160 Publisher: World Wide Journals

DOI: 10.15373/22778160/mar2014/55

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Keywords:

Electron cyclotron resonance Silicon nitride Radio frequency Materials science Chemical vapor deposition Dielectric Plasma Plasma-enhanced chemical vapor deposition Deposition (geology) Thin film Nitride Characterization (materials science) Electron Analytical Chemistry (journal) Optoelectronics Silicon Chemistry Nanotechnology Physics Telecommunications Computer science Environmental chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Characterization of Dielectric Silicon Nitride Thin Films Deposited by Radio Frequency Plasma-Enhanced and Electron Cyclotron Resonance Chemical Vapor Deposition

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