Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Abstract

Thin films of silicon dioxide were deposited at low substrate temperatures (<375 °C) using electron cyclotron resonance plasma enhanced chemical vapor deposition. The deposition parameters studied included substrate temperature and radio frequency substrate bias. The deposited material was compared to thermally grown SiO2, through its etch rate in a buffered hydrofluoric solution, index of refraction, Fourier transform infrared spectroscopy, and Rutherford backscattering spectrometry. Through the application of rf substrate bias the deposited material properties approached that of thermally grown oxide. The feed to the substrate chamber was 40 sccm of a 2.0% silane in He. The large quantity of He in the chamber is credited with making the material more thermal-like.