High frequency performance of vertical InAs nanowire MOSFET

Abstract

We report on RF characterization of vertical, 100-nm-gate length InAs nanowire MOSFETs, utilizing wrap-gate technology and Al2O3 high-kappa gate oxide. The transistors show f(t)=5.6 GHz and f(max)=22 GHz, mainly limited by parasitic capacitances. The RF device performance is described using a hybrid-pi model taking hole generation at the drain into account. Electrostatic modeling of the parasitic capacitances for arrays of vertical nanowires indicates that a strong reduction in extrinsic capacitances can be achieved for devices with a small inter-wire separation.