High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

Abstract

We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation frequency of 155 GHz. The transistor has a transconductance of 730 mS/mm and is based on arrays of nanowires with gate-all-around and high-kappa gate dielectric. Furthermore, small-signal modeling shows a similar to 80% reduction of the total parasitic gate capacitance when the metal pad overlap in the transistors is reduced through additional patterning.