MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors

M. C. Hanna; Z. H. Lu; Andrew F. Cahill; Michael J. Heben; Arthur J. Nozik

doi:10.1016/s0022-0248(97)00029-8

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MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors

M. C. Hanna Z. H. Lu Andrew F. Cahill Michael J. Heben Arthur J. Nozik

Year: 1997 Journal: Journal of Crystal Growth Vol: 174 (1-4)Pages: 605-610 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(97)00029-8

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Keywords:

Metalorganic vapour phase epitaxy Quantum dot Strain (injury) Characterization (materials science) Optoelectronics Materials science Photoluminescence Nanotechnology Chemistry Optics Physics Epitaxy Biology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Surface Roughness and Optical Measurements

Physical Sciences → Engineering → Computational Mechanics

MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors

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