MOCVD Growth and Optical Characterization of Stacked InGaN Quantum Dots for Laser Applications

Abstract

We have successfully grown a stacked InGaN quantum dot (QD) structure for laser applications, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter and height of typical InGaN QDs are 18 nm and 3 nm, respectively. The density of the single-layer QDs is 1.2 × 1010 cm—2. InGaN QDs are formed even when the number of stacked layers is 10. We have also investigated the photoluminescence from the stacked QDs at room temperature. The photoluminescence intensity increases drastically as the number of layers increases. This improvement of photoluminescence intensity leads to lasing action in InGaN QD lasers at room temperature.