JOURNAL ARTICLE

Quantum dots induced by strain from buried and surface stressors

J. H. Davies

Year: 1999 Journal:   Applied Physics Letters Vol: 75 (26)Pages: 4142-4144   Publisher: American Institute of Physics

Abstract

Quantum dots can be induced in a quantum well by strain from a buried, self-assembled dot or from a stressor on the surface. The elastic fields are shown to be significantly different in their ability to trap carriers. There is no dilation around a buried dot, which therefore has no effect on electrons, and the axial strain repels both holes and excitons. A stressor on the surface, in contrast, produces dilation that can confine all carriers. In both cases, the piezoelectric potential may trap electrons and holes separately in space, storing long-lived spatially indirect excitons.

Keywords:
Quantum dot Electron Condensed matter physics Piezoelectricity Exciton Strain (injury) Materials science Physics Nanotechnology Quantum mechanics Composite material

Metrics

41
Cited By
2.30
FWCI (Field Weighted Citation Impact)
16
Refs
0.89
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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