Electrical Properties of Doped Tin Dioxide Thin Films Deposited Using Femtosecond Pulsed Laser Ablation.

J. E. Dominguez; Lei Fu; Xiaoqing Pan

doi:10.1557/proc-654-aa7.3.1

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Electrical Properties of Doped Tin Dioxide Thin Films Deposited Using Femtosecond Pulsed Laser Ablation.

J. E. Dominguez Lei Fu Xiaoqing Pan

Year: 2000 Journal: MRS Proceedings Vol: 654 Publisher: Cambridge University Press

DOI: 10.1557/proc-654-aa7.3.1

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Keywords:

Materials science Tin dioxide Thin film Pulsed laser deposition Dopant Doping Tin oxide Sapphire Analytical Chemistry (journal) Optoelectronics Nanotechnology Laser Optics Metallurgy

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Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Electrical Properties of Doped Tin Dioxide Thin Films Deposited Using Femtosecond Pulsed Laser Ablation.

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