Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

J. M. Gibson; David C. Joy; R. T. Tung; J.L. Ellison; CR Pimentel; A. F. J. Levi

doi:10.1557/proc-56-163

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Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

J. M. Gibson David C. Joy R. T. Tung J.L. Ellison CR Pimentel A. F. J. Levi

Year: 1985 Journal: MRS Proceedings Vol: 56 Publisher: Cambridge University Press

DOI: 10.1557/proc-56-163

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Keywords:

Materials science Schottky barrier Electron beam-induced current Silicon Silicide Current (fluid) Electron Rectangular potential barrier Optoelectronics Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

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