Pressure dependences of silicide/silicon Schottky barrier heights

J.H. Werner; H. von Känel; G. Markewitz; R. T. Tung

doi:10.1016/0169-4332(89)90049-4

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Pressure dependences of silicide/silicon Schottky barrier heights

J.H. Werner H. von Känel G. Markewitz R. T. Tung

Year: 1990 Journal: Applied Surface Science Vol: 41-42 Pages: 159-163 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(89)90049-4

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Keywords:

Schottky barrier Silicide Materials science Silicon Condensed matter physics Schottky diode Polycrystalline silicon Band gap Range (aeronautics) Optoelectronics Nanotechnology Composite material Physics Layer (electronics)

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Pressure dependences of silicide/silicon Schottky barrier heights

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