Silicide-Silicon Schottky Barrier Heights Calculated Using an Interface-Defect Model

Abstract

The Schottky barrier heights of transition-metal silicides on Si are calculated using a model with multiple interface-defect levels. The barrier heights decrease with increasing interface-defect density. An increase in interface-defect density induces the strong Fermi-level pinning which results in the pinning of the Schottky barrier height. With a few exceptions, the measured barrier heights are obtained for the defect densities of 1×10 13 –5×10 13 cm -2 which are found to be sufficient to pin the Fermi-level at the interfaces.