Preparation of transparent conductive oxide films by activated reactive evaporation

Abstract

Indium-tin oxide films have been deposited by re- active electron beam evaporation of In1Sn alloy both in neu- tral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5310 24 q cm) films have been deposited in ionized oxy- gen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters. © 2002 Society of Photo-Optical Instrumen-