JOURNAL ARTICLE

Mechanical properties of pure and doped indium phosphide single crystals

Abstract

The mechanical properties have been studied for the (001) and {111} planes of pure and doped InP single crystals. As was shown the anisotropy of these properties can be successfully investigated by using the sclerometer technique (scratch method) and acoustic emisson method. The influence of doping on microhardness has been revealed to be more pronounced at T/spl sim/600 K than at room temperature.

Keywords:
Materials science Doping Indium phosphide Scratch Indentation hardness Indium Anisotropy Optoelectronics Composite material Optics Microstructure Gallium arsenide

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Citation History

Topics

Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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