Pure and doped indium phosphide by vapour phase epitaxy

R.C. Clarke; L. L. Taylor

doi:10.1016/0022-0248(78)90346-9

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Pure and doped indium phosphide by vapour phase epitaxy

R.C. Clarke L. L. Taylor

Year: 1978 Journal: Journal of Crystal Growth Vol: 43 (4)Pages: 473-479 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(78)90346-9

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Keywords:

Epitaxy Doping Indium phosphide Indium Materials science Wafer Impurity Yield (engineering) Homogeneity (statistics) Silicon Mineralogy Analytical Chemistry (journal) Phosphide Optoelectronics Layer (electronics) Chemistry Nanotechnology Metal Metallurgy Gallium arsenide Chromatography

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Pure and doped indium phosphide by vapour phase epitaxy

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