JOURNAL ARTICLE

Pure and doped indium phosphide by vapour phase epitaxy

R.C. ClarkeL. L. Taylor

Year: 1978 Journal:   Journal of Crystal Growth Vol: 43 (4)Pages: 473-479   Publisher: Elsevier BV
Keywords:
Epitaxy Doping Indium phosphide Indium Materials science Wafer Impurity Yield (engineering) Homogeneity (statistics) Silicon Mineralogy Analytical Chemistry (journal) Phosphide Optoelectronics Layer (electronics) Chemistry Nanotechnology Metal Metallurgy Gallium arsenide Chromatography

Metrics

15
Cited By
1.25
FWCI (Field Weighted Citation Impact)
8
Refs
0.76
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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