Metal organic vapour phase epitaxy of indium phosphide

S. J. Bass; Christopher Pickering; M. L. Young

doi:10.1016/0022-0248(83)90250-6

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Metal organic vapour phase epitaxy of indium phosphide

S. J. Bass Christopher Pickering M. L. Young

Year: 1983 Journal: Journal of Crystal Growth Vol: 64 (1)Pages: 68-75 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(83)90250-6

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Keywords:

Trimethylindium Photoluminescence Analytical Chemistry (journal) Indium Epitaxy Metalorganic vapour phase epitaxy Acceptor Chemistry Indium phosphide Atmospheric temperature range Electron mobility Materials science Optoelectronics Condensed matter physics Organic chemistry Gallium arsenide

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal organic vapour phase epitaxy of indium phosphide

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